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Home News HiSilicon Kirin 990 5G exhibition poster confirms 7nm FinFET Plus EUV fabrication

HiSilicon Kirin 990 5G exhibition poster confirms 7nm FinFET Plus EUV fabrication

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Huawei is all set to unveil its next-generation chipset named Kirin 990 on September 6 at IFA 2019 event Berlin Germany as well as a separate conference held in the Beijing, China. Prior to the official launch, here is an exhibition poster spotted by a well-known German blogger Roland Quandt.


As per seen in the above image, the company claims to be the first 5G focused chipset meaning the company is likely to launch a full-fledged 5G chipset. It is rumored to arrive with integrated 5G modem. Earlier today, Samsung also announces the Exynos 980 SoC with 5G integrated modem, but the processor will be commercially arriving by the next year as the mass production is not yet started. As expected, Kirin 990 is built on the 7nm FinFET Plus EUV process and the slogan reads it, “Rethink Evolution”. Another poster further reveals, “7nm FinFET Plus EUV is TSMS 7nm Fin Field-Effect Transistor Plus Extreme Ultraviolet Lithography Plus Technology.”

TSMS’s 7nm FinFET Plus fabrication detailed information

Based on previous leaks, Kirin 990 is expected to use the latest Cortex-A77 cores coupled with Mali-G77 GPU. According to a previous Chinese report, it can achieve a 20% boost in the CPU department, while, the GPU is likely to be 50% more power-efficient compared to its predecessor Kirin 980. Additionally, it can record up to 4K UHD video @60fps and the same can be found on Huawei’s upcoming Mate 30 series smartphones. For further confirmation, we have to wait for the official announcement.

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sukhdev kamboj
Technology enthusiastic, gadgets lover, aims to crack exclusive news and loves to explore my personal views.


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